- Title
- A two-dimensional electron gas based on a 5s oxide with high room-temperature mobility and strain sensitivity
- Creator
- Feng, Zexin; Qin, Peixin; Yang, Yali; Yan, Han; Guo, Huixin; Wang, Xiaoning; Zhou, Xiaorong; Han, Yuyan; Yi, Jiabao; Qi, Dongchen; Yu, Xiaojiang; Breese, Mark B. H.; Zhang, Xin; Wu, Haojiang; Chen, Hongyu; Xiang, Hongjun; Jiang, Chengbao; Liu, Zhiqi
- Relation
- ARC.FT160100205 http://purl.org/au-research/grants/arc/FT160100205
- Relation
- Acta Materialia Vol. 204, Issue 1 February 2021, no. 116516
- Publisher Link
- http://dx.doi.org/10.1016/j.actamat.2020.116516
- Publisher
- Elsevier
- Resource Type
- journal article
- Date
- 2021
- Description
- The coupling of optical and electronic degrees of freedom together with quantum confinement in low-dimensional electron systems is particularly interesting for achieving exotic functionalities in strongly correlated oxide electronics. Recently, high room-temperature mobility has been achieved for a large bandgap transparent oxide – BaSnO3 upon extrinsic La or Sb doping, which has excited significant research attention. In this work, we report the realization of a two-dimensional electron gas (2DEG) on the surface of transparent BaSnO3 via oxygen vacancy creation, which exhibits a high carrier density of ~7.72 × 1014 cm−2 and a high room-temperature mobility of ~18 cm2·V−1·s−1. Such a 2DEG is rather sensitive to strain and a less than 0.1% in-plane biaxial compressive strain leads to a giant resistance enhancement of ~350% (more than 540 kΩ/□) at room temperature. Thus, this work creates a new path to exploring the physics of low-dimensional oxide electronics and devices applicable at room temperature.
- Subject
- two-dimensional electron gas; 5s oxide; BaSnO3; piezoelectric strain modulation; memory devices
- Identifier
- http://hdl.handle.net/1959.13/1471380
- Identifier
- uon:48665
- Identifier
- ISSN:1359-6454
- Language
- eng
- Reviewed
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